SiC MOSFET power module · Preliminary

HDX001M12HM3

1200 V silicon carbide power module engineered for low inductance and high efficiency in a compact industrial package.

HDX was developed for megawatt charging in the HDPower project.

HDX001M12HM3 is the first module in the HDX series. More versions coming soon.

Specs on this page are preliminary public figures for the site preview. They are not a final production datasheet. Datasheet available on request.

Key specifications

Blocking voltage	1200 V
On-resistance (R_DS(on))	1.1 mΩ
Powerloop inductance	2.5 nH
Package	62 mm
Topology	Half-bridge or full-bridge

Features

SiC switching

Silicon carbide device technology for fast, efficient switching.

Show efficiency graph

Efficiency versus load: SiC MOSFET compared with IGBT — Efficiency vs load — SiC MOSFET vs IGBT

What the graph shows

SiC stays more efficient than a silicon IGBT across the load range — especially at partial load, where many converters spend most of their time. Less wasted energy. Less heat.

Half- or full-bridge

Available as half-bridge or full-bridge.

Easy to parallel

Gate accessible from either side of the module, and power terminals laid out for busbar paralleling.

Low inductance

2.5 nH powerloop inductance for cleaner high-speed operation.

Compact package

62 mm industrial footprint for dense converter designs.

Industrial focus

Built for demanding industrial and energy conversion applications.

Applications

Electric drives

High-efficiency drive stages that benefit from fast SiC switching.

Renewables & conversion

High-power conversion for renewables and related energy systems.

Industrial power

OEM and system-integrator designs that need SiC modules.

Benefits

Straightforward paralleling of modules (dual-side gate access; busbar-friendly power terminals)
Lower conduction and switching losses versus traditional silicon
Enables smaller, cooler converter systems
Low inductance supports clean fast switching

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